Samsung: We’ve slashed programming time with 3-bit vertical NAND

Post by Chris Mellor (thank you) over at El Reg

Korean flash foundry king Samsung has announced the entry of 3-bit (TLC) flash in its V-NAND product line at the Flash Memory Summit.

The product has 32 layers of TLC NAND, TLC being triple-layer cell as opposed to the bulk of today’s business NAND products which use MLC or 2-layer cell with 2 bits per cell.

Read on here

Posted by rogerluethy on August 7, 2014

https://rogerluethy.wordpress.com/2014/08/07/samsung-weve-slashed-programming-time-with-3-bit-vertical-nand/